Datasheet

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Document Number: 73899
S09-0766-Rev. B, 04-May-09
Vishay Siliconix
Si3437DV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1
0.1
0.01
V
SD
- Source-to-Drain Voltage (V)
-)
A(
t
ner
r
u
C
e
cru
o
S I
S
10
1.5 1.2 0.9 0.6 0.3
0.0
T = 25 °C
T = 150 °C
J
J
T
J
- Temperature (°C)
- 0.4
- 0.2
0.0
0.2
0.4
0.6
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
) V ( e c n a i r a - V
V
I
D
= 5 mA
GS(th)
On-Resistance vs. Gate-to-Source Temperature
Single Pulse Power, Junction-to-Ambient
(Ω) Drain-to-Source -R
GS
- Gate-to-Source Voltage (V)
0
1
2
3
4
5
02468 10
I
D
= 1.2 A
125 °C
25 °C
V
DS(on)
0
12
24
36
48
60
Time (s)
)W( re
w
oP
0.001 0.01
0.1 1
10
Safe Operating Area, Junction-to-Ambient
* V
GS
minimum V
GS
at which R
DS(on)
is specified
1
0.1
0.001
0.1
)
A(
tn
e
r
r
uC
niarD
-I
D
0.01
V
DS
- Drain-to-Source Voltage (V)
10
1
10
100
1000
T
A
= 25 °C
Single Pulse
10 s
DC
10 ms
100 ms
1 ms
Limited by R
DS(on)*
1 s