Datasheet

Document Number: 73899
S09-0766-Rev. B, 04-May-09
www.vishay.com
3
Vishay Siliconix
Si3437DV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
2
4
6
8
02468 10
V
DS
- Drain-to-Source Voltage (V)
)A( tnerruC niarD -I
D
V
GS
= 10 V thru 6 V
5 V
0.4
0.6
0.8
1.0
1.2
1
.
4
0.0 1.6 3.2 4.8 6.4 8.0
(Ω) ecnats
is
e
R
-
nO
-R
I
D
- Drain Current (A)
V
GS
= 6 V
V
GS
= 10 V
DS(on)
0
2
4
6
8
10
)V( egatloV ecruoS-ot-
e
t
a
G
-
Q
g
- Total Gate Charge (nC)
V
SG
0 2.6
5.2
7.8
10.4 13
I
D
= 1 A
V
DS
= 75 V
V
DS
= 50 V
V
DS
= 100 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.3
0.6
0.9
1.2
1
.5
02468
V
GS
- Gate-to-Source Voltage (V)
)A( tnerruC niarD -I
D
T
C
= 125 °C
25 °C
- 55 °C
0
150
300
450
600
75
0
04
8 12 16 20
V
DS
- Drain-to-Source Voltage (V)
)Fp( ecnati
c
ap
aC
-
C
C
rss
C
oss
C
iss
0.4
0.8
1.2
1.6
2.0
2
.
4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 1.2 A
T
J
- Junction Temperature (°C)
)
dez
i
lamr
o
N(
R
)n
o
(
SD
ecna
t
sise
R-
n
O
-
V
GS
= 10 V
V
GS
= 6 V