Datasheet

ManualsBrandsVISHAY ManualsFETsSI3437DV-T1-E3, MOSFET

Vishay Siliconix

Si3437DV

Document Number: 73899

S09-0766-Rev. B, 04-May-09

www.vishay.com

P-Channel 150-V (D-S) MOSFET

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)

(A)

(Typ.)

- 150

0.75 at V

= - 10 V - 1.4

8 nC

0.79 at V

= - 6 V - 1.3

Notes:

a. T

= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under Steady State conditions is 110 °C/W.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

- 150

Gate-Source Voltage

± 20

Continuous Drain Current (T

= 150 °C)

= 25 °C

- 1.4

= 70 °C - 1.1

= 25 °C

- 1.1

b,c

= 70 °C

- 0.88

b,c

Pulsed Drain Current

- 5

Continuous Source-Drain Diode Current

= 25 °C

- 2.6

= 25 °C 1.6

b,c

Avalanche Current

L = 0.1 mH

Single-Pulse Avalanche Energy

1.25 mJ

Maximum Power Dissipation

= 25 °C

3.2

= 70 °C 2.1

= 25 °C

b,c

= 70 °C

1.25

b,c

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, d

t ≤ 5 s

thJA

51 62.5

°C/W

Maximum Junction-to-Foot

Steady State

thJF

32 39

Marking Code

AH XXX

Lot Tracea b ility

and Date Code

Part # Code

Ordering Information: Si3437DV-T1-E3 (Lead (Pb)-free)

Si3437DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

TSOP-6

Top View

3 mm

2. 8 5 mm

P-Channel MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET

Power MOSFET

• 100 % R

and UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Active Clamp Circuits in DC/DC Power Supplies

Summary of content (11 pages)

PAGE 1
Si3437DV Vishay Siliconix P-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) (Ω) ID (A)a 0.75 at VGS = - 10 V - 1.4 0.79 at VGS = - 6 V - 1.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.
PAGE 2
Si3437DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 150 Typ. Max.
PAGE 3
Si3437DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 1.5 VGS = 10 V thru 6 V 1.2 4 I D - Drain Current (A) I D - Drain Current (A) 6 5V 2 0.9 0.6 25 °C 0.3 TC = 125 °C 0 - 55 °C 0.0 0 2 4 6 8 10 0 2 VDS - Drain-to-Source Voltage (V) 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.4 750 1.2 600 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 4 1.0 0.8 VGS = 6 V VGS = 10 V 0.
PAGE 4
Si3437DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 10 TJ = 150 °C 1 R DS(on) - Drain-to-Source (Ω) I S - Source Current (A) ID = 1.2 A TJ = 25 °C 0.1 4 3 2 125 °C 1 25 °C 0 0.01 0.0 0.3 0.6 0.9 1.2 0 1.5 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Temperature 0.8 60 0.6 48 ID = 250 µA 0.4 Power (W) V GS(th) - Variance (V) 2 VSD - Source-to-Drain Voltage (V) ID = 5 mA 0.
PAGE 5
Si3437DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 Power (W) 1.3 1.0 0.6 0.3 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 2.4 0.9 Power (W) Power (W) Current Derating* 1.6 0.8 0.6 0.3 0.0 0.
PAGE 6
Si3437DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 75 °C 3. TJM – T = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.
PAGE 7
Package Information Vishay Siliconix TSOP: 5/6−LEAD JEDEC Part Number: MO-193C e1 e1 5 4 6 E1 1 2 5 4 E E1 1 3 2 3 -B- e b E -B- e 0.15 M C B A 5-LEAD TSOP b 0.15 M C B A 6-LEAD TSOP 4x 1 -A- D 0.17 Ref c R R A2 A L2 Gauge Plane Seating Plane Seating Plane 0.08 C L A1 -C- (L1) 4x 1 MILLIMETERS Dim A A1 A2 b c D E E1 e e1 L L1 L2 R Min Nom Max Min Nom Max 0.91 - 1.10 0.036 - 0.043 0.01 - 0.10 0.0004 - 0.004 0.90 - 1.00 0.035 0.038 0.039 0.
PAGE 8
AN823 Vishay Siliconix Mounting LITTLE FOOTR TSOP-6 Power MOSFETs Surface mounted power MOSFET packaging has been based on integrated circuit and small signal packages. Those packages have been modified to provide the improvements in heat transfer required by power MOSFETs. Leadframe materials and design, molding compounds, and die attach materials have been changed. What has remained the same is the footprint of the packages.
PAGE 9
AN823 Vishay Siliconix 10 s (max) 255 − 260_C 1X4_C/s (max) 3-6_C/s (max) 217_C 140 − 170_C 60 s (max) 60-120 s (min) Pre-Heating Zone 3_C/s (max) Reflow Zone Maximum peak temperature at 240_C is allowed. FIGURE 3. Solder Reflow Temperature and Time Durations THERMAL PERFORMANCE TABLE 1. Equivalent Steady State Performance—TSOP-6 Thermal Resistance Rqjf 30_C/W On-Resistance vs. Junction Temperature 1.6 VGS = 4.5 V ID = 6.1 A 1.
PAGE 10
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR TSOP-6 0.099 0.039 0.020 0.019 (1.001) (0.508) (0.493) 0.064 (1.626) 0.028 (0.699) (3.023) 0.119 (2.510) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.
PAGE 11
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