Datasheet

Document Number: 71235
S09-0766-Rev. C, 04-May-09
www.vishay.com
3
Vishay Siliconix
Si3430DV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance (Ω)R
DS(on)
0.00
0.05
0.10
0.15
0.20
0.25
02468
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
= 6.0 V
0
2
4
6
8
10
0123456
V
DS
= 50 V
I
D
= 2.4 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
10
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
100
200
300
400
500
0 102030405060
V
DS
- Drain-to-Source Voltage (V)
rss
C
oss
C
iss
C - Capacitance (pF)
C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 2.4 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance R
DS(on)
0.0
0.1
0.2
0.3
0.4
0246810
I
D
= 2.4 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)