Datasheet

Vishay Siliconix
Si3430DV
Document Number: 71235
S09-0766-Rev. C, 04-May-09
www.vishay.com
1
N-Channel 100-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• High-Efficiency PWM Optimized
• 100 % R
g
Tested
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
100
0.170 at V
GS
= 10 V
2.4
0.185 at V
GS
= 6.0 V
2.3
TSOP-6
Top V iew
6
4
1
2
3
5
2.85 mm
3 mm
Ordering Information: Si3430DV-T1-E3 (Lead (Pb)-free)
Si3430DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
100
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 175 °C)
a
T
A
= 25 °C
I
D
2.4 1.8
A
T
A
= 85 °C
1.7 1.3
Pulsed Drain Current
I
DM
8
Avalanche Current
L = 0.1 mH
I
AR
6
Repetitive Avalanche Energy (Duty Cycle ≤ 1 %)
E
AR
1.8 mJ
Continuous Source Current (Diode Conduction)
a
I
S
1.7 1.0 A
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
2.0 1.14
W
T
A
= 85 °C
1.0 0.59
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
R
thJA
45 62.5
°C/W
Steady State 90 110
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
25 30