Datasheet

Document Number: 72079
S09-0133-Rev. B, 02-Feb-09
www.vishay.com
3
Vishay Siliconix
Si2343DS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
3
6
9
12
15
012345
V
GS
= 10 thru 5 V
3 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
4 V
0.00
0.02
0.04
0.06
0.08
0.10
0.12
03691215
V
GS
= 4.5 V
V
GS
= 10 V
R
DS(on)
I
D
- Drain Current (A)
- On-Resistance (Ω)
0
2
4
6
8
10
03691215
V
DS
=15 V
I
D
= 4.0 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
3
6
9
12
15
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 125 °C
25 °C
0
200
400
600
800
1000
0 5 10 15 20 25 30
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.0 V
I
D
= 4.0 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)