Datasheet

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Document Number: 68717
S09-2433-Rev. C, 16-Nov-09
Vishay Siliconix
Si2333CDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
0.01
0.001
0.1
10
100
T
J
= 150 °C
T
J
= - 55 °C
T
J
= 25 °C
- 0.2
- 0.1
0.0
0.1
0.2
0.3
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
I
D
=1mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
012345
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
I
D
=5.1A
0
2
4
6
8
10
0.01 0.1 1 10 100 1000
Time (s)
Power (W)
T
A
= 25 °C
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
T
A
=25 °C
Single Pulse
100 s, DC
Limited byR
DS(on)
*
BVDSS
Limited
10 ms
1ms
100 µs
100 ms
1s,10s