Datasheet

Document Number: 68717
S09-2433-Rev. C, 16-Nov-09
www.vishay.com
3
Vishay Siliconix
Si2333CDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
5
10
15
20
0.0 0.5 1.0 1.5 2.0
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
=5V thru 2.5 V
V
GS
=1V
V
GS
=1.5V
V
GS
=2V
0.00
0.02
0.04
0.06
0.08
0.10
0 5 10 15 20
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
=1.8V
V
GS
=4.5V
V
GS
=2.5V
0
2
4
6
8
0 5 10 15 20 25
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
=6V
I
D
=5.1A
V
DS
=9V
V
DS
=3V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
0.0 0.3 0.6 0.9 1.2 1.5
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 25 °C
T
C
= 125 °C
T
C
=- 55 °C
C
rss
0
600
1200
1800
2400
036912
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
V
GS
=4.5V
V
GS
=2.5V
I
D
=5.1A