Datasheet

Vishay Siliconix
Si2333CDS
Document Number: 68717
S09-2433-Rev. C, 16-Nov-09
www.vishay.com
1
P-Channel 12-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• PA Switch
MOSFET PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a
Q
g
(Typ.)
- 12
0.035 at V
GS
= - 4.5 V
- 5.1
9 nC
0.045 at V
GS
= - 2.5 V
- 4.5
0.059 at V
GS
= - 1.8 V
- 3.9
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Si2333CDS (O3)*
* Marking Code
Ordering Information: Si2333CDS-T1-E3 (Lead (Pb)-free)
Si2333CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 166 °C/W.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
- 12
V
Gate-Source Voltage
V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
- 7.1
A
T
C
= 70 °C
- 5.7
T
A
= 25 °C
- 5.1
b, c
T
A
= 70 °C
- 4.0
b, c
Pulsed Drain Current
I
DM
- 20
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
- 1.0
T
A
= 25 °C
- 0.63
b, c
Maximum Power Dissipation
T
C
= 25 °C
P
D
2.5
W
T
C
= 70 °C
1.6
T
A
= 25 °C
1.25
b, c
T
A
= 70 °C
0.8
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, d
≤ 5 s
R
thJA
75 100
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
40 50