Datasheet

Document Number: 71796
S11-2000-Rev. F, 10-Oct-11
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3
Vishay Siliconix
Si2328DS
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
R
DS(on)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
036912
I
D
- Drain Current (A)
V
GS
= 10 V
- On-Resistance ()
0
4
8
12
16
20
0123456
V
DS
= 50 V
I
D
= 1.5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
10
1
0.01
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.1
T
J
= 150 °C
T
J
= 25 °C
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
50
100
150
200
250
0 20406080100
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0.0
0.5
1.0
1.5
2.0
2.5
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 1.5 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance (Normalized)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0246810
I
D
= 1.5 A
R
DS(on)
- On-Resistance ()
V
GS
- Gate-to-Source Voltage (V)