Datasheet

Vishay Siliconix
Si2328DS
Document Number: 71796
S11-2000-Rev. F, 10-Oct-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 100 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•100 % R
g
and UIS Tested
• TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(A)
100 0.250 at V
GS
= 10 V 1.5
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2328DS (D8)*
*Marking Code
Ordering Information:
Si2328DS-T1-E3 (Lead (Pb)-free)
Si2328DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage V
DS
100
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
1.5 1.15
A
T
A
= 70 °C 1.2 0.92
Pulsed Drain Current
b
I
DM
6
Avalanche Current
b
L = 0.1 mH
I
AS
6
Single Avalanche Energy E
AS
1.8 mJ
Continuous Source Current (Diode Conduction)
a
I
S
0.6 A
Power Dissipation
a
T
A
= 25 °C
P
D
1.25 0.73
W
T
A
= 70 °C 0.80 0.47
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t  5 s
R
thJA
80 100
°C/WSteady State 130 170
Maximum Junction-to-Foot Steady State R
thJF
45 55