Datasheet

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Document Number: 73238
S09-0133-Rev. B, 02-Feb-09
Vishay Siliconix
Si2325DS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.4
0.1
1
3
0 0.2 0.4 0.6 0.8
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
1.2
- 0.5
- 0.2
0.1
0.4
0.7
1.0
1.3
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0246810
I
D
= 0.5 A
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0.01
0
1
6
12
2
4
10 6000.1
Power (W)
Time (s)
8
10
100
T
A
= 25 °C
Safe Operating Area
10
0.1
0.1 1 10 1000
0.001
1
T
A
= 25 °C
Single Pulse
- Drain Current (A)I
D
0.01
I
D(on)
Limited
DS(on)
*
Limited by R
BVDSS Limited
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1 ms
10 ms
100 ms
100 s, DC
100 µs
10 s, 1 s
100
I
DM
Limited
10
µs