Datasheet

Document Number: 73238
S09-0133-Rev. B, 02-Feb-09
www.vishay.com
3
Vishay Siliconix
Si2325DS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0246810
V
GS
= 10 thru 5 V
3 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
4 V
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
GS
= 6 V
V
GS
= 10 V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
012345678
V
DS
= 75 V
I
D
= 0.5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
012345
25 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 125 °C
0
100
200
300
400
500
0 30 60 90 120 150
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.0
0.5
1.0
1.5
2.0
2.5
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 0.5 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)