Datasheet

Vishay Siliconix
Si2325DS
Document Number: 73238
S09-0133-Rev. B, 02-Feb-09
www.vishay.com
1
P-Channel 150-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• Ultra Low On-Resistance
• Small Size
APPLICATIONS
• Active Clamp Circuits in DC/DC Power Supplies
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A) Q
g
(Typ.)
- 150
1.2 at V
GS
= - 10 V
- 0.69
7.7
1.3 at V
GS
= - 6.0 V
- 0.66
Si2325DS (D5)*
* Marking Code
Ordering Information: Si2325DS -T1-E3 (Lead (Pb)-free)
Si2325DS -T1-GE3 (Lead (Pb)-free and Halogen-free)
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
- 150
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a, b
T
A
= 25 °C
I
D
- 0.69 - 0.53
A
T
A
= 70 °C
- 0.55 - 0.43
Pulsed Drain Current
I
DM
- 1.6
Continuous Source Current (Diode Conduction)
a, b
I
S
- 1.0 - 0.6
Single Pulse Avalanche Current
L = 1.0 mH
I
AS
4.5
Single Pulse Avalanche Energy
E
AS
1.01 mJ
Maximum Power Dissipation
a, b
T
A
= 25 °C
P
D
1.25 0.75
W
T
A
= 70 °C
0.8 0.48
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
R
thJA
75 100
°C/W
Steady State 120 166
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
40 50