Datasheet

Document Number: 72024
S09-0133-Rev. D, 02-Feb-09
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3
Vishay Siliconix
Si2323DS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
4
8
12
16
20
012345
V
GS
= 5 thru 2.5 V
1 V
1.5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
2 V
0.00
0.03
0.06
0.09
0.12
0.15
0 4 8 121620
V
GS
= 4.5 V
V
GS
= 2.5 V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
= 1.8 V
0
1
2
3
4
5
03691215
V
DS
= 6 V
I
D
= 4.7 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5
25 °C
125 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= - 55 °C
0
300
600
900
1200
1500
1800
048121620
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 4.7 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)