Datasheet

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Document Number: 72315
S09-0130-Rev. C, 02-Feb-09
Vishay Siliconix
Si2319DS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
20
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
1
10
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
T
J
- Temperature (°C)
I
D
= 250 µA
V
GS(th)
Variance (V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0246810
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 3 A
Time (s)
Power (W)
T
A
= 25 °C
Single Pulse
10
8
6
4
2
0
0.01 0.1 1 10 100 1000
Safe Operating Area, Junction-to-Case
- Drain Current (A)I
D
100.0
1.0
0.1 1 10 100
0.01
10.0
0.1
(
T
A
= 25 °C
Single Pulse
10 ms
100 ms
10 µs
100 µs
1 ms
10 s, 1 s
100 s, DC
V - Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
DS
Limited by
R *
DS(on)