Datasheet

Document Number: 72315
S09-0130-Rev. C, 02-Feb-09
www.vishay.com
3
Vishay Siliconix
Si2319DS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
4
8
12
16
20
0246810
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 10 V thru 5 V
1 V, 2 V
3 V
4 V
R
DS(on)
- On-Resistance (Ω)
0.00
0.04
0.08
0.12
0.16
0.20
024681012
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
= 4.5 V
0
2
4
6
8
10
024681012
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 20 V
I
D
= 3 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
12
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
GS
- Gate-to-Source Voltage (V)
Drain Current (A)I
D
-
T
C
= 125 °C
- 55 °C
25 °C
0
100
200
300
400
500
600
700
800
0 5 10 15 20 25 30 35 40
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
C
oss
C
iss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 3 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)