Datasheet

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Document Number: 72014
S-80642-Rev. E, 24-Mar-08
Vishay Siliconix
Si2315BDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.2
1
10
20
0.0 0.2 0.4 0.6 0.8
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.0
0.1
0.2
0.3
0.4
012345
I
D
= 3.5 A
- On-Resistance (Ω)R
DS(on)
V
GS
-Gate-to-Source Voltage (V)
0.01
0
1
6
12
2
4
10 6000.1
Power (W)
Time (s)
8
10
100
T
A
= 25 °C
Safe Operating Area
100
1
0.1 1 10 100
Limited
by R
DS(on)*
0.01
10
T
A
= 25 °C
Single Pulse
10 ms
100 ms
DC, 100 s
- Drain Current (A)I
D
0.1
1 ms, 100 µs
1 s
10 s
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified