Datasheet

Document Number: 72014
S-80642-Rev. E, 24-Mar-08
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3
Vishay Siliconix
Si2315BDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
2
4
6
8
10
12
0123456
V
GS
= 4.5 thru 2 V
1.5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.00
0.05
0.10
0.15
0.20
0.25
0.30
024681012
V
GS
= 4.5 V
V
GS
= 2.5 V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
= 1.8 V
0
1
2
3
4
5
0246810
V
DS
= 6 V
I
D
= 3.5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
12
0.0 0.5 1.0 1.5 2.0 2.5
25 °C
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
200
400
600
800
1000
1200
024681012
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 3.5 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance R
DS(on)