Datasheet

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Document Number: 72014
S-80642-Rev. E, 24-Mar-08
Vishay Siliconix
Si2315BDS
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Limits
Unit
Min. Typ. Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= - 10 µA
- 12
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 0.45 - 0.90
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 8 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 12 V, V
GS
= 0 V
- 1
µA
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 55 °C
- 10
On-State Drain Current
a
I
D(on)
V
DS
≤ - 5 V, V
GS
= - 4.5 V
- 6
A
V
DS
≤ - 5 V, V
GS
= - 2.5 V
- 3
Drain-Source On Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 3.85 A
0.040 0.050
Ω
V
GS
= - 2.5 V, I
D
= - 3.4 A
0.050 0.065
V
GS
= - 1.8 V, I
D
= - 2.7 A
0.071 0.100
Forward Transconductance
a
g
fs
V
DS
= - 5 V, I
D
= - 3.85 A
7S
Diode Forward Voltage
a
V
SD
I
S
= - 1.6 A, V
GS
= 0 V
- 1.2 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= - 6 V, V
GS
= - 4.5 V
I
D
≅ - 3.85 A
815
nCGate-Source Charge
Q
gs
1.1
Gate-Drain Charge
Q
gd
2.3
Input Capacitance
C
iss
V
DS
= - 6 V, V
GS
= 0 V, f = 1 MHz
715
pFOutput Capacitance
C
oss
275
Reverse Transfer Capacitance
C
rss
200
Switching
b
Tur n - O n T i m e
t
d(on)
V
DD
= - 6 V, R
L
= 6 Ω
I
D
≅ - 1.0 A, V
GEN
= - 4.5 V
R
G
= 6 Ω
15 20
ns
t
r
35 50
Turn-Off Time
t
d(off)
50 70
t
f
50 75