Datasheet

Document Number: 73235
S10-0791-Rev. D, 05-Apr-10
www.vishay.com
3
Vishay Siliconix
Si2312BDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance (Ω)R
DS(on)
0.00
0.01
0.02
0.03
0.04
0.05
0.06
03691215
I
D
- Drain Current (A)
V
GS
= 1.8 V
V
GS
= 2.5 V
V
GS
= 4.5 V
0
1
2
3
4
5
012345678
V
DS
= 10 V
I
D
= 5.0 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
20
1
0.001
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.1
T
J
= 150 °C
T
J
= 25 °C
10
0.01
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
200
400
600
800
1000
1200
0 4 8 12 16 20
V
DS
- Drain-to-Source Voltage (V)
C
oss
C
iss
C - Capacitance (pF)
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 5.0 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
0.00
0.05
0.10
0.15
0.20
012345678
I
D
= 5.0 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)