Datasheet

Vishay Siliconix
Si2312BDS
Document Number: 73235
S10-0791-Rev. D, 05-Apr-10
www.vishay.com
1
N-Channel 20 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A) Q
g
(Typ.)
20
0.031 at V
GS
= 4.5 V 5.0
7.50.037 at V
GS
= 2.5 V 4.6
0.047 at V
GS
= 1.8 V 4.1
Ordering Information: Si2312BDS-T1-E3 (Lead (Pb)-free)
Si2312BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
* Marking Code
Si2312BDS (M2)*
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage V
DS
20
V
Gate-Source Voltage V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
5.0 3.9
A
T
A
= 70 °C 4.0 3.1
Pulsed Drain Current
b
I
DM
15
Avalanche Current
b
L = 0.1 mH
I
AS
13
Single Avalanche Energy E
AS
8.45 mJ
Continuous Source Current (Diode Conduction)
a
I
S
1.0 0.63 A
Power Dissipation
a
T
A
= 25 °C
P
D
1.25 0.75
W
T
A
= 70 °C 0.80 0.48
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
R
thJA
80 100
°C/WSteady State 120 166
Maximum Junction-to-Foot Steady State R
thJF
50 60