Datasheet

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Document Number: 68980
S-82584-Rev. A, 27-Oct-08
Vishay Siliconix
Si2309CDS
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.00.30.60.91.21.5
1
0.01
0.001
0.1
10
100
T
J
= 150 °C
T
J
= - 50 °C
T
J
= 25 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)
I
S
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
I
D
=1mA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
02468 10
T
J
= 25 °C
T
J
= 125 °C
I
D
=1.25A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
2
4
6
8
0.01 0.1 1 10 100 1000
Time (s)
Power (W)
T
A
= 25 °C
Safe Operating Area, Junction-to-Ambient
10
0.1
0.1 1 10
1
T
A
=25 °C
Single Pulse
1ms
0.01
100
100 µs
Limited byR
DS(on)*
10 µs
10 ms
100 ms
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
1s,10s
100 s, DC