Datasheet

Document Number: 68980
S-82584-Rev. A, 27-Oct-08
www.vishay.com
3
Vishay Siliconix
Si2309CDS
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
2
4
6
8
012345
V
GS
=10thru 5 V
V
GS
=3V
V
GS
=4V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.0
0.2
0.4
0.6
0.8
02468
V
GS
=10V
V
GS
=4.5V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
012345
V
DS
=45V
I
D
=1.25A
V
DS
=30V
V
DS
=15V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
012345
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
C
rss
0
70
140
210
280
350
0 15304560
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150
I
D
=1.25A
V
GS
=4.5V
V
GS
=10V
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)