Datasheet

Vishay Siliconix
Si2309CDS
New Product
Document Number: 68980
S-82584-Rev. A, 27-Oct-08
www.vishay.com
1
P-Channel 60-V (D-S) MOSFET
FEATURES
• Halogen-free Option Available
• TrenchFET
®
Power MOSFET
APPLICATIONS
• Load Switch
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
d
Q
g
(Typ.)
- 60
0.345 at V
GS
= - 10 V - 1.6
2.7 nC
0.450 at V
GS
= - 4.5 V - 1.4
Ordering Information: Si2309CDS-T1-E3 (Lead (Pb)-free)
Si2309CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
* Marking Code
Si2309CDS (N9)*
S
G
D
P-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under Steady State conditions is 166 °C/W.
d. When T
C
= 25 °C.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
- 60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a, b
T
C
= 25 °C
I
D
- 1.6
A
T
C
= 70 °C
- 1.3
T
A
= 25 °C
- 1.2
a, b
T
A
= 70 °C
- 1.0
a, b
Pulsed Drain Current (10 µs Pulse Width)
I
DM
- 8
Single Pulse Avalanche Current L = 0.1 mH
I
AS
- 5
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
- 1.4
T
A
= 25 °C
- 0.9
a, b
Maximum Power Dissipation
T
C
= 25 °C
P
D
1.7
W
T
C
= 70 °C
1.1
T
A
= 25 °C
1.0
a, b
T
A
= 70 °C
0.67
a, b
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, c
t ≤ 5 s
R
thJA
92 120
°C/W
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
58 73