Datasheet

Vishay Siliconix
Si2308BDS
www.vishay.com
4
Document Number: 69958
S-83053-Rev. B, 29-Dec-08
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
1
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
0.1
10
1.2
1.5
1.
8
2.1
2.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.10
0.15
0.20
0.25
0.30
0.35
345678 910
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
I
D
=1.9A
0
10
2
4
)W
(
rewo
P
Time (s)
1 600 10
6
0.1 0.01
100
T
A
= 25 °C
Single Pulse
8
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)I
D
10
0.1
0.1 1 10
1
T
A
= 25 °C
Single Pulse
1ms
10 ms
100 ms
0.01
1s,10s
DC
BVDSS Limited
100
100 µs
Limited byR
DS(on)
*