Datasheet

Vishay Siliconix
Si2308BDS
Document Number: 69958
S-83053-Rev. B, 29-Dec-08
www.vishay.com
1
New Product
N-Channel 60-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• 100 % UIS Tested
APPLICATIONS
• Battery Switch
• DC/DC Converter
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a
Q
g
(Typ.)
60
0.156 at V
GS
= 10 V
2.3
2.3 nC
0.192 at V
GS
= 4.5 V
2.1
Ordering Information: Si2308BDS-T1-E3 (Lead (Pb)-free)
Si2308BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
S
D
Top View
2
3
TO-236
(SSOT23)
1
Si2308BDS (L8)*
*Marking Code
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 130 °C/W.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit
Unit
Drain-Source Voltage V
DS
60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
2.3
A
T
C
= 70 °C
1.8
T
A
= 25 °C
1.9
b, c
T
A
= 70 °C
1.5
b, c
Pulsed Drain Current I
DM
8
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
1.39
T
A
= 25 °C
0.91
b, c
Avalanche Current
L = 0.1 mH
I
AS
6
Single-Pulse Avalanche Energy E
AS
1.8
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
1.66
W
T
C
= 70 °C
1.06
T
A
= 25 °C
1.09
b, c
T
A
= 70 °C
0.7
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, d
≤ 5 s R
thJA
90 115
°C/W
Maximum Junction-to-Foot (Drain) Steady State R
thJF
60 75