Datasheet

Document Number: 72699
S-80427-Rev. C, 03-Mar-08
www.vishay.com
3
Vishay Siliconix
Si2307BDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
2
4
6
8
10
12
0246810
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 10 thru 5 V
2 V
4 V
3 V
- On-Resistance (Ω)R
DS(on)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0246810
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
= 4.5 V
0
2
4
6
8
10
0246810
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 15 V
I
D
= 3 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
12
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 125 °C
- 55 °C
25 °C
0
100
200
300
400
500
600
700
0 5 10 15 20 25 30
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
C
oss
C
iss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 3.2 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)