Datasheet

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Document Number: 72699
S-80427-Rev. C, 03-Mar-08
Vishay Siliconix
Si2307BDS
Notes:
a. Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Limits
Unit Min. Typ. Max.
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= - 10 µA
- 30
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 1.0 - 3.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 30 V, V
GS
= 0 V
- 1
µA
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
- 10
On-State Drain Current
a
I
D(on)
V
DS
≤ - 10 V, V
GS
= - 10 V
- 6 A
Drain-Source On-Resistance
a
R
DS(on)
V
GS
= - 10 V, I
D
= - 3.2 A
0.063 0.078
Ω
V
GS
= - 4.5 V, I
D
= - 2.5 A
0.105 0.130
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 3.2 A
5.0 S
Diode Forward Voltage
V
SD
I
S
= - 0.75 A, V
GS
= 0 V
- 0.85 - 1.2 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= - 15 V, V
GS
= - 10 V
I
D
≅ - 1.7 A
9.0 15
nCGate-Source Charge
Q
gs
1.4
Gate-Drain Charge
Q
gd
2.4
Gate Resistance
R
g
f = 1.0 MHz 8.0 Ω
Input Capacitance
C
iss
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
380
pFOutput Capacitance
C
oss
100
Reverse Transfer Capacitance
C
rss
75
Switching
c
Tur n - O n T i m e
t
d(on)
V
DD
= - 15 V, R
L
= 15 Ω
I
D
≅ - 1.0 A, V
GEN
= - 4.5 V
R
g
= 6 Ω
920
ns
t
r
12 20
Turn-Off Time
t
d(off)
25 40
t
f
14 21