Datasheet

Document Number: 73234
S-80642-Rev. B, 24-Mar-08
www.vishay.com
3
Vishay Siliconix
Si2306BDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance (Ω)R
DS(on)
0.00
0.02
0.04
0.06
0.08
0.10
0 2 4 6 8 10 12 14 16
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0123456
V
DS
= 15 V
I
D
= 3.5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
10
0.1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
50
100
150
200
250
300
350
400
0 5 10 15 20 25 30
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 3.5 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
0.0
0.1
0.2
0.3
0.4
0.5
0246810
I
D
= 3.5 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)