Datasheet
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Document Number: 73234
S-80642-Rev. B, 24-Mar-08
Vishay Siliconix
Si2306BDS
Notes:
a. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Limits
Unit
Min. Typ. Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 µA
30
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
1.0 3.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
0.5
µA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
10
On-State Drain Current
a
I
D(on)
V
DS
≥ 4.5 V, V
GS
= 10 V
6A
Drain-Source On-Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 3.5 A
0.038 0.047
Ω
V
GS
= 4.5 V, I
D
= 2.8 A
0.052 0.065
Forward Transconductance
a
g
fs
V
DS
= 4.5 V, I
D
= 2.5 A
7.0 S
Diode Forward Voltage
V
SD
I
S
= 1.25 A, V
GS
= 0 V
0.8 1.2 V
Dynamic
Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 5 V, I
D
= 2.5 A
3.0 4.5
nC
Total Gate Charge
Q
gt
V
DS
= 15 V, V
GS
= 10 V, I
D
= 2.5 A
69
Gate-Source Charge
Q
gs
1.6
Gate-Drain Charge
Q
gd
0.6
Gate Resistance
R
g
f = 1.0 MHz
2.557.5Ω
Input Capacitance
C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
305
pF
Output Capacitance
C
oss
65
Reverse Transfer Capacitance
C
rss
29
Switching
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 15 V, R
L
= 15 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
g
= 6 Ω
711
ns
Rise Time
t
r
12 18
Turn-Off Delay Time
t
d(off)
14 25
Fall Time
t
f
610
Reverse Recovery Time
t
rr
I
F
= 1.25 A, di/dt = 100 A/µs
14 21
Body Diode Reverse Recovery Charge
Q
rr
610nC
Output Characteristics
0
4
8
12
16
20
0123456
V
GS
= 10 thru 5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
4 V
3 V
Transfer Characteristics
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D