Datasheet

Vishay Siliconix
Si2306BDS
Document Number: 73234
S-80642-Rev. B, 24-Mar-08
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
FEATURES
Halogen-free Option Available
TrenchFET
®
Power MOSFET
100 % R
g
Tested
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A) Q
g
(Typ.)
30
0.047 at V
GS
= 10 V
4.0
3.0
0.065 at V
GS
= 4.5 V
3.5
Ordering Information: Si2306BDS-T1-E3 (Lead (Pb)-free)
Si2306BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
* Marking Code
Si2306BDS (L6 )*
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Notes:
a. Surface Mounted on FR4 board, t 5 s.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a, b
T
A
= 25 °C
I
D
4.0 3.16
A
T
A
= 70 °C
3.5 2.7
Pulsed Drain Current
I
DM
20
Continuous Source Current (Diode Conduction)
a, b
I
S
1.04 0.62
Maximum Power Dissipation
a, b
T
A
= 25 °C
P
D
1.25 0.75
W
T
A
= 70 °C
0.8 0.48
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t 5 s
R
thJA
80 100
°C/W
Steady State 130 166
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
60 75
RoHS
COMPLIANT

Summary of content (8 pages)