Datasheet

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Document Number: 64847
S10-0720-Rev. C, 29-Mar-10
Vishay Siliconix
Si2305CDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
T
J
=25 °C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
V
GS(th)
(V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.02
0.04
0.06
0.08
0.10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 2 A, T
J
= 25 °C
I
D
= 4.4 A, T
J
= 25 °C
I
D
= 2 A, T
J
= 125 °C
I
D
= 4.4 A, T
J
= 125 °C
0
5
10
15
20
25
30
Power (W)
Time (s)
10 10000.10.010.001 1001
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10
0.01
10
I
D
- Drain Current (A)
0.1
T
A
= 25 °C
Single Pulse
Limited byR
DS(on)
*
BVDSS
Limited
DC
1 s, 10 s
100 ms
10 ms
1 ms