Datasheet

Document Number: 64847
S10-0720-Rev. C, 29-Mar-10
www.vishay.com
3
Vishay Siliconix
Si2305CDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
5
10
15
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
DS
-- Drain-to-Source Voltage (V)
I
D
- Drain Current(A)
V
GS
= 5 V thru 2 V
V
GS
= 1.5 V
V
GS
= 1 V
0.00
0.03
0.06
0.09
0.12
0.15
0 5 10 15 20
R
DS(on)
- On-Resistance (Ω)
I
D
-- Drain Current (A)
V
GS
=2.5V
V
GS
= 1.8 V
V
GS
= 4.5 V
0
2
4
6
8
048 12 16 20
I
D
= 4.4 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 6.4 V
V
DS
=2 V
V
DS
=4 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
0.0 0.3 0.6 0.9 1.2 1.5
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current(A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
C
rss
0
300
600
900
1200
1500
1800
02468
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
I
D
= 4.4 A
V
GS
=2.5V
V
GS
=4.5V, 1.8 V