Datasheet

Vishay Siliconix
Si2305CDS
Document Number: 64847
S10-0720-Rev. C, 29-Mar-10
www.vishay.com
1
P-Channel 8 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
• DC/DC Converter
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
d
Q
g
(Typ.)
- 8
0.035 at V
GS
= - 4.5 V - 5.8
12 nC0.048 at V
GS
= - 2.5 V - 5.0
0.065 at V
GS
= - 1.8 V - 4.3
Ordering Information: Si2305CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
* Marking Code
Si2305CDS (N5)*
S
G
D
P-Channel MOSFET
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 175 °C/W.
d. T
C
= 25 °C.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
- 8
V
Gate-Source Voltage
V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
- 5.8
A
T
C
= 70 °C
- 4.7
T
A
= 25 °C
- 4.4
a, b
T
A
= 70 °C
- 3.5
a, b
Pulsed Drain Current (10 µs Pulse Width)
I
DM
- 20
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
- 1.4
T
A
= 25 °C
- 0.8
a, b
Maximum Power Dissipation
T
C
= 25 °C
P
D
1.7
W
T
C
= 70 °C
1.1
T
A
= 25 °C
0.96
a, b
T
A
= 70 °C
0.62
a, b
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, c
t ≤ 5 s
R
thJA
100 130
°C/W
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
60 75