Datasheet

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Document Number: 72503
S11-1908-Rev. E, 26-Sep-11
Vishay Siliconix
Si2304BDS
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72503
.
Threshold Voltage
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
Single Pulse Power
0
10
2
4
Power (W)
Time (s)
1 60010
6
0.10.01
100
T
A
= 25 °C
Single Pulse
8
Safe Operating Area
100
1
0.1 1 10 100
0.01
10
T
A
= 25 °C
Single Pulse
- Drain Current (A)I
D
0.1
R
DS(on)*
Limited by
BV
DSS
Limited
I
DM
Limited
1 ms
10 ms
100 ms
DC, 100 s, 10 s, 1 s
10 µs
100 µs
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
>
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-
3
10
-
2
110
600
10
-
1
10
-
4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 130 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM