Datasheet

Document Number: 72503
S11-1908-Rev. E, 26-Sep-11
www.vishay.com
3
Vishay Siliconix
Si2304BDS
This document is subject to change without notice.
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
-R
DS(on)
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0246810
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
012345
V
DS
= 15 V
I
D
= 2.5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
10
0.001
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.01
0.1
1
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
50
100
150
200
250
300
350
0 5 10 15 20 25 30
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 2.5 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance (Normalized)
0.00
0.04
0.08
0.12
0.16
0.20
0246810
I
D
= 2.5 A
-R
DS(on)
V
GS
- Gate-to-Source Voltage (V)