Datasheet
www.vishay.com
2
Document Number: 72503
S11-1908-Rev. E, 26-Sep-11
Vishay Siliconix
Si2304BDS
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test: PW 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SPECIFICATIONS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions
Limits
Unit
Min. Typ. Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 µA
30
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
1.5 3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
0.5
µA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
10
V
DS
= 30 V, V
GS
= 1 V, T
J
= 25 °C
1
On-State Drain Current
a
I
D(on)
V
DS
4.5 V, V
GS
= 10 V
6A
Drain-Source On-Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 2.5 A
0.055 0.070
V
GS
= 4.5 V, I
D
= 2 A
0.080 0.105
Forward Transconductance
a
g
fs
V
DS
= 4.5 V, I
D
= 2.5 A
6S
Diode Forward Voltage
V
SD
I
S
= 1.25 A, V
GS
= 0 V
0.8 1.2 V
Dynamic
Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 5 V, I
D
= 2.5 A
2.6 4
nC
Total Gate Charge
Q
gt
V
DS
= 15 V, V
GS
= 10 V, I
D
= 2.5 A
4.6 7
Gate-Source Charge
Q
gs
0.8
Gate-Drain Charge
Q
gd
1.15
Gate Resistance
R
g
f = 1 MHz 0.6 3 6
Input Capacitance
C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
225
pFOutput Capacitance
C
oss
50
Reverse Transfer Capacitance
C
rss
28
Switching
Turn - O n D e l ay Tim e
t
d(on)
V
DD
= 15 V, R
L
= 15
I
D
1 A, V
GEN
= 10 V, R
g
= 6
7.5 12
ns
Rise Time
t
r
12.5 20
Turn-Off Delay Time
t
d(off)
19 30
Fall Time
t
f
15 25
Output Characteristics
0
2
4
6
8
10
0246810
V
GS
= 10 thru 5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
4 V
3 V
Transfer Characteristics
0
2
4
6
8
10
012345
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D