Datasheet

Document Number: 69991
S-83053-Rev. B, 29-Dec-08
www.vishay.com
3
Vishay Siliconix
Si2303CDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
2
4
6
8
10
012345
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
=10thru 5 V
V
GS
=3V
V
GS
=4V
0
0.1
0.2
0.3
0.4
0.5
02468 10
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
=4.5V
I
D
=1.9A
0
2
4
6
8
10
01234
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
=24V
V
DS
=15V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
01234
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
C
rss
0
60
120
180
240
300
0 6 12 18 24 30
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
V
GS
=10V,I
D
=1.9A
V
GS
=4.5V,I
D
=1.4A