Datasheet

Vishay Siliconix
Si2303CDS
Document Number: 69991
S-83053-Rev. B, 29-Dec-08
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• 100 % UIS Tested
APPLICATIONS
• Load Switch
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 160 °C/W.
MOSFET PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a
Q
g
(Typ.)
- 30
0.190 at V
GS
= - 10 V
- 2.7
2 nC
0.330 at V
GS
= - 4.5 V
- 2.1
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Si2303CDS (N3)*
* Marking Code
Ordering Information: Si2303CDS-T1-E3 (Lead (Pb)-free)
Si2303CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
- 30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
- 2.7
A
T
C
= 70 °C
- 2.2
T
A
= 25 °C
- 1.9
b, c
T
A
= 70 °C
- 1.5
b, c
Pulsed Drain Current
I
DM
- 10
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
- 1.75
T
A
= 25 °C
- 0.83
b, c
Avalanche Current
L = 0.1 mH
I
AS
- 5
Single Pulse Avalanche Energy
E
AS
1.25
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
2.3
W
T
C
= 70 °C
1.5
T
A
= 25 °C
1.0
b, c
T
A
= 70 °C
0.7
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, d
≤ 5 s
R
thJA
80 120
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
35 55