Datasheet

Document Number: 68645
S12-2336-Rev. D, 01-Oct-12
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3
Vishay Siliconix
Si2302CDS
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.4
0.8
1.2
1.6
2.0
0.0 0.3 0.6 0.9 1.2 1.5
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
80
160
240
320
400
0 5 10 15 20
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
V
GS
=2.5V,I
D
=3.1A
V
GS
=4.5V,I
D
=3.6A
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.03
0.04
0.05
0.06
0.07
02468 10
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
=2.5V
V
GS
=4.5V
I
D
=3.6A
0
1
2
3
4
5
01234
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 15 V
V
DS
=10V
V
DS
= 5 V
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
0.01
0.001
0.1
10
100
T
J
= 25 °C
T
J
= 150 °C
T
J
= - 55 °C