Datasheet

Vishay Siliconix
Si2302CDS
Document Number: 68645
S12-2336-Rev. D, 01-Oct-12
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: [e-mail]
N-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Power MOSFET
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switching for Portable Devices
• DC/DC Converter
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(A) Q
g
(Typ.)
20
0.057 at V
GS
= 4.5 V
2.9
3.5
0.075 at V
GS
= 2.5 V
2.6
Ordering Information: Si2302CDS-T1-E3 (Lead (Pb)-free)
Si2302CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
* Marking Code
Si2302CDS (N2)*
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
2.9 2.6
A
T
A
= 70 °C
2.3 2.1
Pulsed Drain Current
b
I
DM
10
Continuous Source Current (Diode Conduction)
a
I
S
0.72 0.6
Power Dissipation
a
T
A
= 25 °C
P
D
0.86 0.71
W
T
A
= 70 °C
0.55 0.46
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t  5 s
R
thJA
120 145
°C/W
Steady State 140 175
Maximum Junction-to-Foot Steady State
R
thJF
62 78