Datasheet

Document Number: 68741
S10-2430-Rev. C, 25-Oct-10
www.vishay.com
3
Vishay Siliconix
Si2301CDS
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
V
GS
=1.5V
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
=5V thru 2.5 V
V
GS
=1V
V
GS
=2V
0.00
0.05
0.10
0.15
0.20
02468 10
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
=4.5V
V
GS
=2.5V
0
2
4
6
8
02468 10
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
I
D
=3A
V
DS
=10V
V
DS
=5V
V
DS
=15V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.00
0.25
0.50
0.75
1.00
0.0 0.3 0.6 0.9 1.2 1.5
V
GS
- Gate-to-Source Voltage (V )
- Drain Current (A)I
D
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
C
rss
0
200
400
600
800
0 5 10 15 20
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
0.7
0.9
1.1
1.3
1.5
- 50 - 25 0 25 50 75 100 125 150
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
V
GS
=1.8V
I
D
=2.8 A
V
GS
=4.5V