Datasheet

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Document Number: 72066
S11-2044-Rev. F, 17-Oct-11
Vishay Siliconix
Si2301BDS
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
- Source Current (A)I
S
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
10
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
1
Variance (V)V
GS(th)
- 0.2
- 0.1
0.0
0.1
0.2
0.3
0.4
- 50 - 25 0 25 50 75 100 125 150
T
J
- Temperature (°C)
I
D
= 250 µA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.0
0.1
0.2
0.3
0.4
0.5
0.6
012345
-R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 2.8 A
Time (s)
Power (W)
T
A
= 25 °C
10
8
6
4
2
0
0.01 0.1 1 10 100 1000
Safe Operating Area
Square Wave Pulse Duration (s)
V
DS
- Drain-to-Source Voltage (V)
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
10 µs
100 µs
1 ms
10 ms
100 ms
T
A
= 25 °C
Single Pulse
DC, 100 s, 10 s, 1 s
R
DS(on)*
Limited by
* V
GS
minimum V
GS
at which R
DS(on)
is specified