Datasheet

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Document Number: 71080
S11-2043-Rev. J, 17-Oct-11
Vishay Siliconix
Si1902DL
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71080
.
Threshold Voltage
- 0.4
- 0.3
- 0.2
- 0.1
0
0.1
0.2
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V) V
GS(th)
T
J
- Temperature (°C)
Single Pulse Power, Junction-to-Ambient
0
3
5
1
2
Power (W)
Time (s)
4
1 100 6001010
-1
10
-2
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Ef fective T ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
th JA
= 400 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Ef fective Transient
Thermal Impedance