Datasheet

Document Number: 71080
S11-2043-Rev. J, 17-Oct-11
www.vishay.com
3
Vishay Siliconix
Si1902DL
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Drain Current
Gate Charge
Surge-Drain Diode Forward Voltage
- On-Resistance ()R
DS(on)
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.2 0.4 0.6 0.8 1.0
I
D
- Drain Current (A)
V
GS
= 2.5 V
V
GS
= 4.5 V
0
1
2
3
4
5
0.0 0.2 0.4 0.6 0.8
V
DS
= 10 V
I
D
= 0.66 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
1
0.1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
20
40
60
80
100
0 4 8 121620
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1
.
6
- 50 - 25
02
5
5
0
7
5 100 125 150
V
GS
= 4.5 V
I
D
= 0.66 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
0.0
0.2
0.4
0.6
0.8
1.0
012345
I
D
= 0.66 A
- On-Resistance ()
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)