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Vishay Siliconix

Si1902DL

Document Number: 71080

S11-2043-Rev. J, 17-Oct-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual N-Channel 20 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

Power MOSFETs: 2.5 V Rated

• 100 % R

Tested

• Compliant to RoHS Directive 2002/95/EC

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

PRODUCT SUMMARY

(V) R

DS(on)

()I

(A)

0.385 at V

= 4.5 V

0.70

0.630 at V

= 2.5 V

0.54

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

±12

Continuous Drain Current (T

= 150 °C)

= 25 °C

0.70 0.66

= 85 °C

0.50 0.48

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

0.25 0.23

Maximum Power Dissipation

= 25 °C

0.30 0.27

= 85 °C

0.16 0.14

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

t 5 s

thJA

360 415

°C/W

Steady State 400 460

Maximum Junction-to-Foot (Drain) Steady State

thJF

300 350

arkin

Code

Lot T

SOT-363

SC-70 (6-LEADS)

Top V

iew

Part # Code

Marking Code

Lot Traceability

and Date Code

Ordering Information:

Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel)

Si1902DL-T1-GE3 (Lead (Pb)-free and Halogen-free)

Summary of content (9 pages)

PAGE 1
Si1902DL Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 2.
PAGE 2
Si1902DL Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. 0.6 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage a V nA VDS = 16 V, VGS = 0 V 1 VDS = 16 VGS = 0 V, TJ = 85°C 5 VDS  5 V, VGS = 4.5 V µA 1 A VGS = 4.5 V, ID = 0.
PAGE 3
Si1902DL Vishay Siliconix 1.0 100 0.8 80 0.6 C - Capacitance (pF) R DS(on) - On-Resistance () TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS = 2.5 V 0.4 VGS = 4.5 V Ciss 60 40 Coss 20 0.2 Crss 0.0 0.0 0 0.2 0.4 0.6 0.8 0 1.0 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 5 1.6 VDS = 10 V ID = 0.66 A VGS = 4.5 V ID = 0.66 A 4 1.
PAGE 4
Si1902DL Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.2 5 4 ID = 250 µA 0 Power (W) VGS(th) Variance (V) 0.1 - 0.1 3 2 - 0.2 1 - 0.3 - 0.4 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 10-3 Threshold Voltage 10-2 10-1 1 Time (s) 10 100 600 Single Pulse Power, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2.
PAGE 5
Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.
PAGE 6
AN814 Vishay Siliconix Dual-Channel LITTLE FOOTR SC-70 6-Pin MOSFET Recommended Pad Pattern and Thermal Performance INTRODUCTION This technical note discusses the pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for dual-channel LITTLE FOOT power MOSFETs in the SC-70 package.
PAGE 7
AN814 Vishay Siliconix SC-70 (6-PIN) PD + Dual EVB Elevated Ambient 60 _C TJ(max) * TA Rq JA o o PD + 150 Co* 25 C 400 CńW PD + 312 mW PD + TJ(max) * TA Rq JA o o PD + 150 Co* 60 C 400 CńW PD + 225 mW NOTE: Although they are intended for low-power applications, devices in the 6-pin SC-70 will handle power dissipation in excess of 0.2 W.
PAGE 8
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.
PAGE 9
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