Datasheet

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Document Number: 74468
S10-0646-Rev. C, 22-Mar-10
Vishay Siliconix
Si1471DH
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.3 0.6 0.9 1.2 1.5
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.01
0.1
1
10
T
J
= 25 °C
T
J
- Temperature (°C)
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)
V
GS(th)
I
D
= 5 mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
V
GS
- Gate-to-Source Voltage (V)
0.0
0.1
0.2
0.3
0.4
0.5
012345678 910
I
D
= 2.0 A
- On-Resistance (Ω)R
DS(on)
125 °C
25 °C
0
6
12
1
8
24
30
011100.0 0.01
Time (s)
Power (W)
0.1
Safe Operating Area, Junction-to-Ambient
1
00101110.0
0.01
10
1 s
0.1
10 ms
100 ms
DC
0.1
Limited by
R
DS(on)*
10 s
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
1 ms
T
C
= 25 °C
Single Pulse
- Drain Current (A)I
D