Datasheet

Document Number: 74468
S10-0646-Rev. C, 22-Mar-10
www.vishay.com
3
Vishay Siliconix
Si1471DH
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
2
4
6
8
0.0 0.5 1.0 1.5 2.0 2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 3 V
2 V
- Drain Current (A)I
D
0.05
0.10
0.15
0.20
0.25
02468 10
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
= 4.5 V
- On-Resistance (Ω)R
DS(on)
V
GS
= 2.5 V
0
2
4
6
8
10
0 3 6 9 12 15
Q
g
- Total Gate Charge (nC)
I
D
= 2.5 A
- Gate-to-Source Voltage (V)
V
GS
V
DS
= 10 V
V
DS
= 15 V
V
DS
= 20 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
V
GS
- Gate-to-Source Voltage (V)
0.0
0.4
0.8
1.2
1.6
2.0
0123
25 °C
- 55 °C
T
C
= 125 °C
- Drain Current (A)I
D
C
rss
V
DS
- Drain-to-Source Voltage (V)
0
160
320
480
640
800
0 6 12 18 24 30
C
oss
C
iss
C - Capacitance (pF)
T
J
- Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 3 A
R
DS(on)
- On-Resistance
(Normalized)
V
GS
= 10 V
V
GS
= 4.5 V