Datasheet

ManualsBrandsVISHAY ManualsFETsSI1471DH-T1-E3, MOSFET

Vishay Siliconix

Si1471DH

Document Number: 74468

S10-0646-Rev. C, 22-Mar-10

www.vishay.com

P-Channel 30 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

Power MOSFET

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch for Portable Devices

PRODUCT SUMMARY

(V) R

DS(on)

(Ω)

(A)

(Typ.)

- 30

0.100 at V

= - 10 V - 2.7

6.5 nC0.120 at V

= - 4.5 V - 2.7

0.175 at V

= - 2.5 V - 2.7

Ordering Information: Si1471DH-T1-E3 (Lead (Pb)-free)

Si1471DH-T1-GE3 (Lead (Pb)-free and Halogen-free)

SOT-363

SC-70 (6-LEADS)

Top V i ew

Marking Code

BN XX

Lot Traceability

and Date Code

Part #

Code

P-Channel MOSFET

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. Package limited.

d. Maximum under steady state conditions is 125 °C/W.

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

- 30

Gate-Source Voltage

± 12

Continuous Drain Current (T

= 150 °C)

a, b

= 25 °C

- 2.7

= 70 °C

- 2.7

= 25 °C

- 2.8

a, b

= 70 °C

- 2.3

a, b

Pulsed Drain Current (10 µs Pulse Width)

- 8

Continuous Source-Drain Diode Current

a, b

= 25 °C

- 2.3

= 25 °C

- 1.25

a, b

Maximum Power Dissipation

a, b

= 25 °C

2.78

= 70 °C

1.78

= 25 °C

1.5

a, b

= 70 °C

a, b

Operating Junction and Storage Temperature Range

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

c, d

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, d

t ≤ 5 s

thJA

60 80

°C/W

Maximum Junction-to-Foot (Drain) Steady State

thJF

34 45

Summary of content (12 pages)

PAGE 1
Si1471DH Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)c 0.100 at VGS = - 10 V - 2.7 - 30 0.120 at VGS = - 4.5 V - 2.7 0.175 at VGS = - 2.5 V - 2.7 Qg (Typ.) 6.
PAGE 2
Si1471DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max.
PAGE 3
Si1471DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 8 VGS = 10 V thru 3 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 6 4 2V 1.2 0.8 25 °C 2 0.4 TC = 125 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 VDS - Drain-to-Source Voltage (V) 3 Transfer Characteristics 0.25 800 640 0.20 VGS = 2.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.15 VGS = 4.5 V Ciss 480 320 0.
PAGE 4
Si1471DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 10 RDS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 2.0 A 1 TJ = 150 °C TJ = 25 °C 0.1 0.4 0.3 0.2 125 °C 0.1 25 °C 0.0 0.01 0.0 0.3 0.6 0.9 1.2 0 1.5 3 4 5 6 7 8 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 10 30 ID = 250 µA 0.4 24 0.2 Power (W) V GS(th) Variance (V) 2 Source-Drain Diode Forward Voltage 0.
PAGE 5
Si1471DH Vishay Siliconix 5 3.5 4 2.8 Power Dissipation (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited 3 2 1 2.1 1.4 0.7 0 0.0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Foot 1.20 Power Dissipation (W) 0.96 0.72 0.48 0.24 0.
PAGE 6
Si1471DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4.
PAGE 7
Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.
PAGE 8
AN815 Vishay Siliconix Single-Channel LITTLE FOOTR SC-70 6-Pin MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance INTRODUCTION EVALUATION BOARDS SINGLE SC70-6 The new single 6-pin SC-70 package with a copper leadframe enables improved on-resistance values and enhanced thermal performance as compared to the existing 3-pin and 6-pin packages with Alloy 42 leadframes. These devices are intended for small to medium load applications where a miniaturized package is required.
PAGE 9
AN815 Vishay Siliconix Front of Board SC70-6 Back of Board SC70-6 vishay.com FIGURE 3. THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (Package Performance) COOPER LEADFRAME Room Ambient 25 _C The junction to foot thermal resistance is a useful method of comparing different packages thermal performance. A helpful way of presenting the thermal performance of the 6-Pin SC-70 copper leadframe device is to compare it to the traditional Alloy 42 version.
PAGE 10
AN815 400 250 320 200 240 Thermal Resistance (C/W) Thermal Resistance (C/W) Vishay Siliconix Alloy 42 160 Copper 80 150 Alloy 42 100 50 Copper 0 0 10-5 10-4 10-3 10-2 10-1 1 10 100 1000 10-5 Leadframe Comparison on EVB Document Number: 71334 12-Dec-03 10-3 10-2 10-1 1 10 100 1000 Time (Secs) Time (Secs) FIGURE 4. 10-4 FIGURE 5. Leadframe Comparison on Alloy 42 1-inch2 PCB www.vishay.
PAGE 11
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.
PAGE 12
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